N-channel transistor FDD5690, D-PAK ( TO-252 ), TO-252, 60V, 9A, 30A, 1uA, 0.023 Ohms, TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. Housing: D-PAK ( TO-252 ). Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 60V. ID (T=100°C): 9A. ID (T=25°C): 30A. Idss (max): 1uA. On-resistance Rds On: 0.023 Ohms. Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. Assembly/installation: surface-mounted component (SMD). C(in): 1110pF. Channel type: N. Ciss Gate Capacitance [pF]: 1110pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Cost): 150pF. Drain current Id (A) @ 25°C: 30A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.023 Ohms @ 9A. Drain-source protection: yes. Function: DC/DC Converter, Low gate charge (23nC). G-S Protection: no. Gate breakdown voltage Ugs [V]: 4 v. Gate/source voltage Vgs: 20V. Id(imp): 100A. Manufacturer's marking: FDD5690. Marking on the case: FDD5690. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 50W. Note: Logic level gated transistor. Number of terminals: 2. Number of terminals: 3. Operating temperature: -55...+150°C. Quantity per case: 1. RoHS: yes. Switch-off delay tf[nsec.]: 24 ns. Switch-on time ton [nsec.]: 10 ns. Td(off): 24 ns. Td(on): 10 ns. Technology: PowerTrench MOSFET. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:19