N-channel transistor FDB8447L, 50A, 1uA, 0.0087 Ohms, D2PAK ( TO-263 ), TO-263AB, 40V

N-channel transistor FDB8447L, 50A, 1uA, 0.0087 Ohms, D2PAK ( TO-263 ), TO-263AB, 40V

Quantity
Unit price
1-4
3.14$
5-24
2.80$
25-49
2.59$
50-99
2.44$
100+
2.22$
Quantity in stock: 58

N-channel transistor FDB8447L, 50A, 1uA, 0.0087 Ohms, D2PAK ( TO-263 ), TO-263AB, 40V. ID (T=100°C): -. ID (T=25°C): 50A. Idss (max): 1uA. On-resistance Rds On: 0.0087 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263AB. Voltage Vds(max): 40V. Assembly/installation: surface-mounted component (SMD). C(in): 1970pF. Channel type: N. Cost): 250pF. Drain-source protection: yes. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): -. Id(imp): 100A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 60W. Quantity per case: 1. RoHS: yes. Td(off): 28 ns. Td(on): 11 ns. Technology: PowerTrench MOSFET. Trr Diode (Min.): 28 ns. Type of transistor: MOSFET. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 09:19

Technical documentation (PDF)
FDB8447L
28 parameters
ID (T=25°C)
50A
Idss (max)
1uA
On-resistance Rds On
0.0087 Ohms
Housing
D2PAK ( TO-263 )
Housing (according to data sheet)
TO-263AB
Voltage Vds(max)
40V
Assembly/installation
surface-mounted component (SMD)
C(in)
1970pF
Channel type
N
Cost)
250pF
Drain-source protection
yes
Function
High-speed switching
G-S Protection
no
Gate/source voltage Vgs
20V
Id(imp)
100A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
60W
Quantity per case
1
RoHS
yes
Td(off)
28 ns
Td(on)
11 ns
Technology
PowerTrench MOSFET
Trr Diode (Min.)
28 ns
Type of transistor
MOSFET
Vgs(th) max.
3V
Vgs(th) min.
1V
Original product from manufacturer
ON Semiconductor