N-channel transistor FDA50N50, TO-3P, 500V. Housing: TO-3P. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 500V. Ciss Gate Capacitance [pF]: 6460pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 48A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.105 Ohms @ 24A. Gate breakdown voltage Ugs [V]: 5V. Manufacturer's marking: FDA50N50. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 625W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 460 ns. Switch-on time ton [nsec.]: 220 ns. Original product from manufacturer: Onsemi (fairchild). Quantity in stock updated on 11/02/2025, 23:16