N-channel transistor ECW20N20, 16A, 10mA, TO-264 ( TOP-3L ), TO-264, 200V

N-channel transistor ECW20N20, 16A, 10mA, TO-264 ( TOP-3L ), TO-264, 200V

Quantity
Unit price
1-4
21.83$
5-9
19.84$
10-24
18.37$
25-49
17.50$
50+
16.48$
Quantity in stock: 18

N-channel transistor ECW20N20, 16A, 10mA, TO-264 ( TOP-3L ), TO-264, 200V. ID (T=25°C): 16A. Idss (max): 10mA. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Voltage Vds(max): 200V. Assembly/installation: PCB through-hole mounting. C(in): 900pF. Channel type: N. Cost): 500pF. Drain-source protection: yes. Function: AUDIO POWER Amplifier MOSFET. G-S Protection: no. Gate/source voltage (off) max.: 1.5V. Gate/source voltage (off) min.: 0.1V. Gate/source voltage Vgs: 14V. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 250W. Pinout: 1 - G, 2 - S, 3 - D. Quantity per case: 1. RoHS: yes. Spec info: complementary transistor (pair) ECW20P20. Td(off): 90 ns. Td(on): 155 ns. Technology: N–CHANNEL POWER MOSFET. Type of transistor: MOSFET. Various: HI-FI Power Amplifier. Original product from manufacturer: Exicon. Quantity in stock updated on 10/31/2025, 09:19

Technical documentation (PDF)
ECW20N20
28 parameters
ID (T=25°C)
16A
Idss (max)
10mA
Housing
TO-264 ( TOP-3L )
Housing (according to data sheet)
TO-264
Voltage Vds(max)
200V
Assembly/installation
PCB through-hole mounting
C(in)
900pF
Channel type
N
Cost)
500pF
Drain-source protection
yes
Function
AUDIO POWER Amplifier MOSFET
G-S Protection
no
Gate/source voltage (off) max.
1.5V
Gate/source voltage (off) min.
0.1V
Gate/source voltage Vgs
14V
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
250W
Pinout
1 - G, 2 - S, 3 - D
Quantity per case
1
RoHS
yes
Spec info
complementary transistor (pair) ECW20P20
Td(off)
90 ns
Td(on)
155 ns
Technology
N–CHANNEL POWER MOSFET
Type of transistor
MOSFET
Various
HI-FI Power Amplifier
Original product from manufacturer
Exicon