N-channel transistor DF600R12IP4D, 600A, other, other, 1200V. Ic(T=100°C): 600A. Housing: other. Housing (according to data sheet): other. Collector/emitter voltage Vceo: 1200V. Assembly/installation: PCB through-hole mounting. C(in): 37pF. CE diode: yes. Channel type: N. Collector current: 600A. Dimensions: 172x89x37mm. Function: VCE(sat) 1.7V (Ic=600A, VGE=15V, 25°C). Gate/emitter voltage VGE(th) min.: 5.8V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 1200A. Number of terminals: 10. Operating temperature: -40...+150°C. Pd (Power Dissipation, Max): 3350W. RoHS: yes. Saturation voltage VCE(sat): 1.7V. Spec info: ICRM--Tp=1mS 1200A. Td(off): 0.7 ns. Td(on): 0.21 ns. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 07:27