N-channel transistor CSD17313Q2T, 5A, 1uA, 0.024...0.042 Ohms, WSON6, 2mm × 2mm plastic case, 30 v. ID (T=25°C): 5A. Idss (max): 1uA. On-resistance Rds On: 0.024...0.042 Ohms. Housing: WSON6. Housing (according to data sheet): 2mm × 2mm plastic case. Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 260pF. Channel type: N. Cost): 140pF. Drain-source protection: yes. G-S Protection: no. Gate/source voltage Vgs: 8V. IDss (min): -. Id(imp): 57A. Number of terminals: 6. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 17W. Quantity per case: 1. RoHS: yes. Td(off): 4.2 ns. Td(on): 2.8 ns. Technology: N-Channel NexFET™ Power MOSFET. Temperature: +150°C. Type of transistor: MOSFET. Vgs(th) max.: 1.8V. Vgs(th) min.: 0.9V. Original product from manufacturer: Texas Instruments. Quantity in stock updated on 10/31/2025, 09:19