N-channel transistor BUZ77B, 1.7A, 2.9A, 100uA, 3 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 1.7A. ID (T=25°C): 2.9A. Idss (max): 100uA. On-resistance Rds On: 3 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 460pF. Channel type: N. Cost): 55pF. Function: BSIPMOS® Power Transistor, Enhancement mode. Gate/source voltage Vgs: 20V. IDss (min): 0.1uA. Id(imp): 11.5A. Operating temperature: -50...+150°C. Pd (Power Dissipation, Max): 75W. Quantity per case: 1. Td(off): 50 ns. Td(on): 8 ns. Technology: V-MOS. Trr Diode (Min.): 350 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V. Original product from manufacturer: Siemens. Quantity in stock updated on 10/31/2025, 09:19