N-channel transistor BUZ102S, 37A, 52A, 52A, 0.018 Ohms, D2PAK ( TO-263 ), P-TO263-3-2, 55V. ID (T=100°C): 37A. ID (T=25°C): 52A. Idss (max): 52A. On-resistance Rds On: 0.018 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): P-TO263-3-2. Voltage Vds(max): 55V. Assembly/installation: surface-mounted component (SMD). C(in): 1220pF. Channel type: N. Cost): 410pF. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 120W. Quantity per case: 1. Td(off): 30 ns. Td(on): 12 ns. Technology: SIPMOS, PowerMosfet. Type of transistor: MOSFET. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 09:25