N-channel transistor BUK9575-55A, 14A, 20A, 500uA, 0.064 Ohms, TO-220, SOT-78 ( TO220AB ), 55V

N-channel transistor BUK9575-55A, 14A, 20A, 500uA, 0.064 Ohms, TO-220, SOT-78 ( TO220AB ), 55V

Quantity
Unit price
1-4
1.62$
5-24
1.40$
25-49
1.27$
50-99
1.16$
100+
0.99$
Quantity in stock: 31

N-channel transistor BUK9575-55A, 14A, 20A, 500uA, 0.064 Ohms, TO-220, SOT-78 ( TO220AB ), 55V. ID (T=100°C): 14A. ID (T=25°C): 20A. Idss (max): 500uA. On-resistance Rds On: 0.064 Ohms. Housing: TO-220. Housing (according to data sheet): SOT-78 ( TO220AB ). Voltage Vds(max): 55V. Assembly/installation: PCB through-hole mounting. C(in): 440pF. Channel type: N. Conditioning unit: 50. Conditioning: plastic tube. Cost): 90pF. Drain-source protection: yes. Function: Automotive, power switching, 12V and 24V Motor. G-S Protection: no. Gate/source voltage Vgs: 10V. IDss (min): 0.05uA. Id(imp): 81A. Number of terminals: 3. Pd (Power Dissipation, Max): 62W. Quantity per case: 1. RoHS: yes. Spec info: IDM--81A (Tmb 25°C; pulsed). Td(off): 28 ns. Td(on): 10 ns. Technology: TrenchMOS logic level POWER MOSFET. Temperature: +175°C. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Original product from manufacturer: Nxp Semiconductors. Quantity in stock updated on 10/31/2025, 09:25

Technical documentation (PDF)
BUK9575-55A
33 parameters
ID (T=100°C)
14A
ID (T=25°C)
20A
Idss (max)
500uA
On-resistance Rds On
0.064 Ohms
Housing
TO-220
Housing (according to data sheet)
SOT-78 ( TO220AB )
Voltage Vds(max)
55V
Assembly/installation
PCB through-hole mounting
C(in)
440pF
Channel type
N
Conditioning unit
50
Conditioning
plastic tube
Cost)
90pF
Drain-source protection
yes
Function
Automotive, power switching, 12V and 24V Motor
G-S Protection
no
Gate/source voltage Vgs
10V
IDss (min)
0.05uA
Id(imp)
81A
Number of terminals
3
Pd (Power Dissipation, Max)
62W
Quantity per case
1
RoHS
yes
Spec info
IDM--81A (Tmb 25°C; pulsed)
Td(off)
28 ns
Td(on)
10 ns
Technology
TrenchMOS logic level POWER MOSFET
Temperature
+175°C
Trr Diode (Min.)
33 ns
Type of transistor
MOSFET
Vgs(th) max.
2V
Vgs(th) min.
1V
Original product from manufacturer
Nxp Semiconductors