N-channel transistor BTS611L1E, D²-PAK/7, TO-263, 34V. Housing: D²-PAK/7. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 34V. Ciss Gate Capacitance [pF]: -. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 4A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ 1.8A. Gate breakdown voltage Ugs [V]: -. Manufacturer's marking: BTS611L1. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 36W. Number of terminals: 3. RoHS: no. Switch-off delay tf[nsec.]: 400us. Switch-on time ton [nsec.]: 400us. Original product from manufacturer: Infineon. Quantity in stock updated on 11/02/2025, 19:01