N-channel transistor BTS50010-1TAE, D²-PAK/7, TO-263, 18V. Housing: D²-PAK/7. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 18V. Ciss Gate Capacitance [pF]: -. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 40A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.002 Ohm @ 40A. Gate breakdown voltage Ugs [V]: -. Manufacturer's marking: S50010E. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 200W. Number of terminals: 6. RoHS: yes. Switch-off delay tf[nsec.]: -. Switch-on time ton [nsec.]: -. Original product from manufacturer: Infineon. Quantity in stock updated on 11/02/2025, 20:19