N-channel transistor BTS436L2GATMA1, 38m Ohms, D²-PAK/5, PG-TO263-5-2, TO-263, 41V. On-resistance Rds On: 38m Ohms. Housing: D²-PAK/5. Housing (according to data sheet): PG-TO263-5-2. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 41V. Assembly/installation: PCB through-hole mounting. Ciss Gate Capacitance [pF]: -. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 9.8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.072 Ohm @ 2A. Gate breakdown voltage Ugs [V]: -. Manufacturer's marking: -. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 75W. Number of terminals: 3. RoHS: yes. Spec info: N-MOS 43V 9.8A. Switch-off delay tf[nsec.]: 250us. Switch-on time ton [nsec.]: 200us. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 09:52