N-channel transistor BTS432E2E3062A, D²-PAK/5, TO-263, 42V

N-channel transistor BTS432E2E3062A, D²-PAK/5, TO-263, 42V

Quantity
Unit price
1+
32.05$
Quantity in stock: 882

N-channel transistor BTS432E2E3062A, D²-PAK/5, TO-263, 42V. Housing: D²-PAK/5. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 42V. Ciss Gate Capacitance [pF]: -. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 11A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.038 Ohms @ 2A. Gate breakdown voltage Ugs [V]: -. Manufacturer's marking: BTS432E2-SMD. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 125W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 80us. Switch-on time ton [nsec.]: 300us. Original product from manufacturer: Infineon. Quantity in stock updated on 11/02/2025, 23:16

Technical documentation (PDF)
BTS432E2E3062A
15 parameters
Housing
D²-PAK/5
Housing (JEDEC standard)
TO-263
Drain-source voltage Uds [V]
42V
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
11A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.038 Ohms @ 2A
Manufacturer's marking
BTS432E2-SMD
Max temperature
+150°C.
Maximum dissipation Ptot [W]
125W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
80us
Switch-on time ton [nsec.]
300us
Original product from manufacturer
Infineon