N-channel transistor BTS432E2, 38m Ohms, TO-220, TO-220-5-11, 42V

N-channel transistor BTS432E2, 38m Ohms, TO-220, TO-220-5-11, 42V

Quantity
Unit price
1-4
13.46$
5-9
12.20$
10-24
11.30$
25-49
10.65$
50+
9.66$
Quantity in stock: 19

N-channel transistor BTS432E2, 38m Ohms, TO-220, TO-220-5-11, 42V. On-resistance Rds On: 38m Ohms. Housing: TO-220. Housing (JEDEC standard): -. Housing (according to data sheet): TO-220-5-11. Drain-source voltage Uds [V]: 42V. Assembly/installation: PCB through-hole mounting. Ciss Gate Capacitance [pF]: -. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 11A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.038 Ohms @ 2A. Gate breakdown voltage Ugs [V]: -. Manufacturer's marking: BTS432E2. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 125W. Number of terminals: 5. Number of terminals: 5. RoHS: yes. Spec info: PROFET N-MOS 43V 11A. Switch-off delay tf[nsec.]: 80us. Switch-on time ton [nsec.]: 300us. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 09:52

Technical documentation (PDF)
BTS432E2
19 parameters
On-resistance Rds On
38m Ohms
Housing
TO-220
Housing (according to data sheet)
TO-220-5-11
Drain-source voltage Uds [V]
42V
Assembly/installation
PCB through-hole mounting
Component family
MOSFET, N-MOS
Configuration
PCB through-hole mounting
Drain current Id (A) @ 25°C
11A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.038 Ohms @ 2A
Manufacturer's marking
BTS432E2
Max temperature
+150°C.
Maximum dissipation Ptot [W]
125W
Number of terminals
5
Number of terminals
5
RoHS
yes
Spec info
PROFET N-MOS 43V 11A
Switch-off delay tf[nsec.]
80us
Switch-on time ton [nsec.]
300us
Original product from manufacturer
Infineon Technologies