N-channel transistor BST82, 0.12A, 0.19A, 10uA, 5 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 100V. ID (T=100°C): 0.12A. ID (T=25°C): 0.19A. Idss (max): 10uA. On-resistance Rds On: 5 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 100V. Assembly/installation: surface-mounted component (SMD). C(in): 25pF. Channel type: N. Cost): 8.5pF. Drain-source protection: diode. Function: Very Fast Switching. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 0.01uA. Id(imp): 0.8A. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 0.83W. Quantity per case: 1. RoHS: yes. Spec info: Logic level compatible. Td(off): 12 ns. Td(on): 3 ns. Technology: 'enhancement mode field-effect transistor'. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. Vgs(th) max.: 3.5V. Vgs(th) min.: 1V. Original product from manufacturer: Nxp Semiconductors. Quantity in stock updated on 10/31/2025, 09:25