N-channel transistor BST72A, 0.19A, 1uA, 5 Ohms, TO-92, SOT54, 100V

N-channel transistor BST72A, 0.19A, 1uA, 5 Ohms, TO-92, SOT54, 100V

Quantity
Unit price
1-4
1.56$
5-49
1.42$
50-99
1.32$
100+
1.24$
Quantity in stock: 14

N-channel transistor BST72A, 0.19A, 1uA, 5 Ohms, TO-92, SOT54, 100V. ID (T=25°C): 0.19A. Idss (max): 1uA. On-resistance Rds On: 5 Ohms. Housing: TO-92. Housing (according to data sheet): SOT54. Voltage Vds(max): 100V. C(in): 25pF. Channel type: N. Cost): 8.5pF. Drain-source protection: yes. Function: Very fast switching, Logic level compatible. G-S Protection: no. IDss (min): 0.01uA. Id(imp): 0.8A. Pd (Power Dissipation, Max): 0.83W. Quantity per case: 1. Td(off): 12 ns. Td(on): 3 ns. Technology: Enhancement mode, TrenchMOS™ technology.. Temperature: +150°C. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Original product from manufacturer: Philips Semiconductors. Quantity in stock updated on 10/31/2025, 09:25

Technical documentation (PDF)
BST72A
25 parameters
ID (T=25°C)
0.19A
Idss (max)
1uA
On-resistance Rds On
5 Ohms
Housing
TO-92
Housing (according to data sheet)
SOT54
Voltage Vds(max)
100V
C(in)
25pF
Channel type
N
Cost)
8.5pF
Drain-source protection
yes
Function
Very fast switching, Logic level compatible
G-S Protection
no
IDss (min)
0.01uA
Id(imp)
0.8A
Pd (Power Dissipation, Max)
0.83W
Quantity per case
1
Td(off)
12 ns
Td(on)
3 ns
Technology
Enhancement mode, TrenchMOS™ technology.
Temperature
+150°C
Trr Diode (Min.)
30 ns
Type of transistor
MOSFET
Vgs(th) max.
2V
Vgs(th) min.
1V
Original product from manufacturer
Philips Semiconductors