N-channel transistor BSS670S2LH6327XTSA1, SOT-23, 55V
Quantity
Unit price
1+
0.70$
| Quantity in stock: 16500 |
N-channel transistor BSS670S2LH6327XTSA1, SOT-23, 55V. Housing: SOT-23. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 55V. Ciss Gate Capacitance [pF]: 75pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 0.54A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.43 Ohm @ 0.27A. Gate breakdown voltage Ugs [V]: 1.6V. Manufacturer's marking: -. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.36W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 31 ns. Switch-on time ton [nsec.]: 14 ns. Original product from manufacturer: Infineon. Quantity in stock updated on 11/02/2025, 18:53
BSS670S2LH6327XTSA1
15 parameters
Housing
SOT-23
Drain-source voltage Uds [V]
55V
Ciss Gate Capacitance [pF]
75pF
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
0.54A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.43 Ohm @ 0.27A
Gate breakdown voltage Ugs [V]
1.6V
Max temperature
+150°C.
Maximum dissipation Ptot [W]
0.36W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
31 ns
Switch-on time ton [nsec.]
14 ns
Original product from manufacturer
Infineon