N-channel transistor BSS139H6327, SOT-23, TO-236AB, 250V

N-channel transistor BSS139H6327, SOT-23, TO-236AB, 250V

Quantity
Unit price
1+
1.12$
Quantity in stock: 6000

N-channel transistor BSS139H6327, SOT-23, TO-236AB, 250V. Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Drain-source voltage Uds [V]: 250V. Ciss Gate Capacitance [pF]: 76pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 0.03A. Drain current through resistor Rds [Ohm] @ Ids [A]: 30 Ohms @ 15mA. Gate breakdown voltage Ugs [V]: 1.4V. Manufacturer's marking: STs. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.36W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 43 ns. Switch-on time ton [nsec.]: 8.7 ns. Original product from manufacturer: Infineon. Quantity in stock updated on 11/02/2025, 20:19

Technical documentation (PDF)
BSS139H6327
17 parameters
Housing
SOT-23
Housing (JEDEC standard)
TO-236AB
Drain-source voltage Uds [V]
250V
Ciss Gate Capacitance [pF]
76pF
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
0.03A
Drain current through resistor Rds [Ohm] @ Ids [A]
30 Ohms @ 15mA
Gate breakdown voltage Ugs [V]
1.4V
Manufacturer's marking
STs
Max temperature
+150°C.
Maximum dissipation Ptot [W]
0.36W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
43 ns
Switch-on time ton [nsec.]
8.7 ns
Original product from manufacturer
Infineon