N-channel transistor BSS123LT1G, SOT-23, TO-236AB, 100V. Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Drain-source voltage Uds [V]: 100V. : 'enhanced'. Assembly/installation: SMD. Ciss Gate Capacitance [pF]: 20pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 0.17A. Drain current through resistor Rds [Ohm] @ Ids [A]: 6 Ohms @ 100mA. Drain current: 0.17A. Drain-source voltage: 100V. Gate breakdown voltage Ugs [V]: 2.6V. Gate-source voltage: ±20V. Manufacturer's marking: SA. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.225W. Number of terminals: 3. On-state resistance: 6 Ohms. Polarity: unipolar. Power: 0.225W. RoHS: yes. Switch-off delay tf[nsec.]: 40 ns. Switch-on time ton [nsec.]: 20 ns. Type of transistor: N-MOSFET. Original product from manufacturer: Onsemi. Quantity in stock updated on 11/02/2025, 22:31