N-channel transistor BSS123-E6327, SOT-23, 100V. Housing: SOT-23. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 100V. Ciss Gate Capacitance [pF]: 20.9pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 0.19A. Drain current through resistor Rds [Ohm] @ Ids [A]: 10 Ohms @ 0.15A. Gate breakdown voltage Ugs [V]: 1.8V. Manufacturer's marking: 'SAs'. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.5W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 11 ns. Switch-on time ton [nsec.]: 3.5 ns. Original product from manufacturer: Infineon. Quantity in stock updated on 11/02/2025, 22:31