N-channel transistor BSP297, SOT-223, 200V. Housing: SOT-223. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 200V. Ciss Gate Capacitance [pF]: 300pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 0.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 2 Ohms @ 0.65A. Gate breakdown voltage Ugs [V]: 1.8V. Manufacturer's marking: BSP297. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 1.5W. Number of terminals: 3. RoHS: no. Switch-off delay tf[nsec.]: 160 ns. Switch-on time ton [nsec.]: 12 ns. Original product from manufacturer: Infineon. Quantity in stock updated on 11/02/2025, 23:36