N-channel transistor BSP135, SOT-223, 600V
Quantity
Unit price
1-24
2.19$
25+
1.82$
| Quantity in stock: 234 |
N-channel transistor BSP135, SOT-223, 600V. Housing: SOT-223. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 600V. Ciss Gate Capacitance [pF]: 146pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 0.1A. Drain current through resistor Rds [Ohm] @ Ids [A]: 60 Ohms @ 0.01A. Gate breakdown voltage Ugs [V]: 2.1V. Manufacturer's marking: BSP135. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 1.8W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 42 ns. Switch-on time ton [nsec.]: 8.1 ns. Original product from manufacturer: Infineon. Quantity in stock updated on 11/02/2025, 22:31
BSP135
16 parameters
Housing
SOT-223
Drain-source voltage Uds [V]
600V
Ciss Gate Capacitance [pF]
146pF
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
0.1A
Drain current through resistor Rds [Ohm] @ Ids [A]
60 Ohms @ 0.01A
Gate breakdown voltage Ugs [V]
2.1V
Manufacturer's marking
BSP135
Max temperature
+150°C.
Maximum dissipation Ptot [W]
1.8W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
42 ns
Switch-on time ton [nsec.]
8.1 ns
Original product from manufacturer
Infineon