N-channel transistor BSP100, 4.4A, 6A, 100nA, 0.8 Ohms, SOT-223 ( TO-226 ), SOT-223, 30 v. ID (T=100°C): 4.4A. ID (T=25°C): 6A. Idss (max): 100nA. On-resistance Rds On: 0.8 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 250pF. Channel type: N. Cost): 88pF. Drain-source protection: diode. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 10nA. Id(imp): 24A. Number of terminals: 4. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 8.3W. Quantity per case: 1. RoHS: yes. Td(off): 21 ns. Td(on): 6 ns. Technology: Enhancement mode, TrenchMOS transistor. Trr Diode (Min.): 69 ns. Type of transistor: MOSFET. Vgs(th) max.: 2.8V. Vgs(th) min.: 1V. Original product from manufacturer: Nxp Semiconductors. Quantity in stock updated on 10/31/2025, 09:25