N-channel transistor BS107ARL1G, TO-92, 200V, 250mA, 30nA, 6.4 Ohms, TO-92, 200V. Housing: TO-92. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 200V. ID (T=25°C): 250mA. Idss (max): 30nA. On-resistance Rds On: 6.4 Ohms. Housing (according to data sheet): TO-92. Voltage Vds(max): 200V. Assembly/installation: PCB through-hole mounting. C(in): 60pF. Channel type: N. Ciss Gate Capacitance [pF]: 60pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Cost): 30pF. Drain current Id (A) @ 25°C: 250mA. Drain current through resistor Rds [Ohm] @ Ids [A]: 14 Ohms @ 0.2A. Drain-source protection: zener diode. G-S Protection: no. Gate breakdown voltage Ugs [V]: 3V. Gate/source voltage Vgs: 20V. Id(imp): 500mA. Manufacturer's marking: BS107A. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.35W. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 0.6W. Quantity per case: 1. RoHS: yes. Switch-off delay tf[nsec.]: 15 ns. Switch-on time ton [nsec.]: 15 ns. Td(off): 12 ns. Td(on): 6 ns. Technology: (D-S) MOSFETs. Type of transistor: MOSFET. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 09:25