N-channel transistor BF998, SOT-143, 30mA, 15mA, SOT-143, 12V

N-channel transistor BF998, SOT-143, 30mA, 15mA, SOT-143, 12V

Quantity
Unit price
1-4
0.47$
5-24
0.39$
25-49
0.34$
50-99
0.31$
100+
0.26$
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Quantity in stock: 217

N-channel transistor BF998, SOT-143, 30mA, 15mA, SOT-143, 12V. Housing: SOT-143. ID (T=25°C): 30mA. Idss (max): 15mA. Housing (according to data sheet): SOT-143. Voltage Vds(max): 12V. Assembly/installation: surface-mounted component (SMD). C(in): 2.1pF. Channel type: N. Cost): 1.1pF. Drain-source protection: no. Function: VHF and UHF applications with 12V supply voltage. G-S Protection: no. IDss (min): 5mA. Marking on the case: MOS. Number of terminals: 4. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 200mW. Quantity per case: 1. RoHS: yes. Technology: Silicon N-channel dual-gate MOS-FET. Temperature: +150°C. Type of transistor: MOSFET. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 09:25

Technical documentation (PDF)
BF998
23 parameters
Housing
SOT-143
ID (T=25°C)
30mA
Idss (max)
15mA
Housing (according to data sheet)
SOT-143
Voltage Vds(max)
12V
Assembly/installation
surface-mounted component (SMD)
C(in)
2.1pF
Channel type
N
Cost)
1.1pF
Drain-source protection
no
Function
VHF and UHF applications with 12V supply voltage
G-S Protection
no
IDss (min)
5mA
Marking on the case
MOS
Number of terminals
4
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
200mW
Quantity per case
1
RoHS
yes
Technology
Silicon N-channel dual-gate MOS-FET
Temperature
+150°C
Type of transistor
MOSFET
Original product from manufacturer
Infineon Technologies