| Quantity in stock: 1482 |
N-channel transistor BF245C, TO-92, 25mA, 25mA, TO-92, 30 v
Quantity
Unit price
1-4
1.59$
5-49
1.50$
50-99
1.45$
100-199
1.30$
200+
1.21$
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| Equivalence available | |
| Quantity in stock: 34 |
N-channel transistor BF245C, TO-92, 25mA, 25mA, TO-92, 30 v. Housing: TO-92. ID (T=25°C): 25mA. Idss (max): 25mA. Housing (according to data sheet): TO-92. Voltage Vds(max): 30 v. Assembly/installation: PCB through-hole mounting. C(in): 4pF. Channel type: N. Cost): 1.6pF. Drain current: 25uA. Drain-source protection: no. Drain-source voltage: 30V. Function: HF-VHF. G-S Protection: no. Gate/source voltage (off) max.: 7.5V. Gate/source voltage (off) min.: 3.2V. Gate/source voltage Vgs: 8V. IDss (min): 12mA. IGF: 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. Polarity: unipolar. Power: 300mW. Quantity per case: 1. RoHS: yes. Technology: Field Effect Transistor. Temperature: +150°C. Type of transistor: JFET. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:25
BF245C
29 parameters
Housing
TO-92
ID (T=25°C)
25mA
Idss (max)
25mA
Housing (according to data sheet)
TO-92
Voltage Vds(max)
30 v
Assembly/installation
PCB through-hole mounting
C(in)
4pF
Channel type
N
Cost)
1.6pF
Drain current
25uA
Drain-source protection
no
Drain-source voltage
30V
Function
HF-VHF
G-S Protection
no
Gate/source voltage (off) max.
7.5V
Gate/source voltage (off) min.
3.2V
Gate/source voltage Vgs
8V
IDss (min)
12mA
IGF
10mA
Number of terminals
3
Pd (Power Dissipation, Max)
300mW
Polarity
unipolar
Power
300mW
Quantity per case
1
RoHS
yes
Technology
Field Effect Transistor
Temperature
+150°C
Type of transistor
JFET
Original product from manufacturer
Fairchild