| Quantity in stock: 4 |
N-channel transistor BF245B, 25mA, 15mA, TO-92, TO-92, 30 v
Quantity
Unit price
1-4
1.33$
5-24
1.19$
25-49
1.12$
50-99
1.05$
100+
0.93$
| Equivalence available | |
| Quantity in stock: 41 |
N-channel transistor BF245B, 25mA, 15mA, TO-92, TO-92, 30 v. ID (T=25°C): 25mA. Idss (max): 15mA. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 30 v. Assembly/installation: PCB through-hole mounting. C(in): 4pF. Channel type: N. Cost): 1.6pF. Drain-source protection: no. Function: HF-VHF. G-S Protection: no. Gate/source voltage (off) max.: 3.8V. Gate/source voltage (off) min.: 1.6V. Gate/source voltage Vgs: 8V. IDss (min): 6mA. IGF: 10mA. Number of terminals: 3. Operating temperature: -...+150°C. Pd (Power Dissipation, Max): 300mW. Quantity per case: 1. RoHS: yes. Technology: Field Effect Transistor. Type of transistor: JFET. Original product from manufacturer: Philips Semiconductors. Quantity in stock updated on 10/31/2025, 09:25
BF245B
25 parameters
ID (T=25°C)
25mA
Idss (max)
15mA
Housing
TO-92
Housing (according to data sheet)
TO-92
Voltage Vds(max)
30 v
Assembly/installation
PCB through-hole mounting
C(in)
4pF
Channel type
N
Cost)
1.6pF
Drain-source protection
no
Function
HF-VHF
G-S Protection
no
Gate/source voltage (off) max.
3.8V
Gate/source voltage (off) min.
1.6V
Gate/source voltage Vgs
8V
IDss (min)
6mA
IGF
10mA
Number of terminals
3
Operating temperature
-...+150°C
Pd (Power Dissipation, Max)
300mW
Quantity per case
1
RoHS
yes
Technology
Field Effect Transistor
Type of transistor
JFET
Original product from manufacturer
Philips Semiconductors
Equivalent products and/or accessories for BF245B
| Quantity in stock: 1094 |