N-channel transistor APT8075BVRG, 12A, 250uA, 0.75 Ohms, TO-247, TO-247, 800V. ID (T=25°C): 12A. Idss (max): 250uA. On-resistance Rds On: 0.75 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 2600pF. Channel type: N. Cost): 270pF. Drain-source protection: yes. Function: fast switching, low leakage. G-S Protection: no. Gate/source voltage (off) min.: 2V. Gate/source voltage Vgs: 30 v. IDss (min): 25uA. Id(imp): 48A. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 260W. Quantity per case: 1. Td(off): 45 ns. Td(on): 12 ns. Technology: Power MOSV. Trr Diode (Min.): 600 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Original product from manufacturer: Advanced Power. Quantity in stock updated on 10/31/2025, 09:25