N-channel transistor APT5010JVR, 44A, 250uA, 0.10 Ohms, ISOTOP ( SOT227B ), ISOTOP ( SOT-227 ), 500V

N-channel transistor APT5010JVR, 44A, 250uA, 0.10 Ohms, ISOTOP ( SOT227B ), ISOTOP ( SOT-227 ), 500V

Quantity
Unit price
1-2
38.23$
3-4
36.76$
5-9
34.00$
10+
31.62$
Quantity in stock: 13

N-channel transistor APT5010JVR, 44A, 250uA, 0.10 Ohms, ISOTOP ( SOT227B ), ISOTOP ( SOT-227 ), 500V. ID (T=25°C): 44A. Idss (max): 250uA. On-resistance Rds On: 0.10 Ohms. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT-227 ). Voltage Vds(max): 500V. Assembly/installation: PCB through-hole mounting. C(in): 7400pF. Channel type: N. Cost): 1000pF. Drain-source protection: yes. Function: fast switching, low leakage. G-S Protection: no. Gate/source voltage (off) min.: 2V. Gate/source voltage Vgs: 30 v. IDss (min): 25uA. Id(imp): 176A. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 450W. Quantity per case: 1. Td(off): 54 ns. Td(on): 14 ns. Technology: Power MOSV. Trr Diode (Min.): 620 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Original product from manufacturer: Advanced Power. Quantity in stock updated on 10/31/2025, 09:25

Technical documentation (PDF)
APT5010JVR
27 parameters
ID (T=25°C)
44A
Idss (max)
250uA
On-resistance Rds On
0.10 Ohms
Housing
ISOTOP ( SOT227B )
Housing (according to data sheet)
ISOTOP ( SOT-227 )
Voltage Vds(max)
500V
Assembly/installation
PCB through-hole mounting
C(in)
7400pF
Channel type
N
Cost)
1000pF
Drain-source protection
yes
Function
fast switching, low leakage
G-S Protection
no
Gate/source voltage (off) min.
2V
Gate/source voltage Vgs
30 v
IDss (min)
25uA
Id(imp)
176A
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
450W
Quantity per case
1
Td(off)
54 ns
Td(on)
14 ns
Technology
Power MOSV
Trr Diode (Min.)
620 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Original product from manufacturer
Advanced Power