N-channel transistor APT15GP60BDQ1G, 27A, TO-247, TO-247, 600V

N-channel transistor APT15GP60BDQ1G, 27A, TO-247, TO-247, 600V

Quantity
Unit price
1-4
12.30$
5-14
11.49$
15-29
10.83$
30-59
10.32$
60+
9.36$
Quantity in stock: 13

N-channel transistor APT15GP60BDQ1G, 27A, TO-247, TO-247, 600V. Ic(T=100°C): 27A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. C(in): 1685pF. CE diode: yes. Channel type: N. Collector current: 56A. Cost): 210pF. Function: High frequency switch mode power supplies. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 65A. Maximum saturation voltage VCE(sat): 2.7V. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 250W. RoHS: yes. Saturation voltage VCE(sat): 2.2V. Td(off): 29 ns. Td(on): 8 ns. Technology: POWER MOS 7® IGBT. Trr Diode (Min.): 55ms. Original product from manufacturer: Advanced Power. Quantity in stock updated on 10/31/2025, 08:56

Technical documentation (PDF)
APT15GP60BDQ1G
27 parameters
Ic(T=100°C)
27A
Housing
TO-247
Housing (according to data sheet)
TO-247
Collector/emitter voltage Vceo
600V
Assembly/installation
PCB through-hole mounting
C(in)
1685pF
CE diode
yes
Channel type
N
Collector current
56A
Cost)
210pF
Function
High frequency switch mode power supplies
Gate/emitter voltage VGE(th) min.
3V
Gate/emitter voltage VGE(th)max.
6V
Gate/emitter voltage VGE
20V
Germanium diode
no
Ic(pulse)
65A
Maximum saturation voltage VCE(sat)
2.7V
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
250W
RoHS
yes
Saturation voltage VCE(sat)
2.2V
Td(off)
29 ns
Td(on)
8 ns
Technology
POWER MOS 7® IGBT
Trr Diode (Min.)
55ms
Original product from manufacturer
Advanced Power