N-channel transistor AP4800CGM, 8.4A, 10.4A, 10uA, 10.4A, 0.014 Ohms, SO, SO-8, 30 v. ID (T=100°C): 8.4A. ID (T=25°C): 10.4A. Idss: 10uA. Idss (max): 10.4A. On-resistance Rds On: 0.014 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 450pF. Channel type: N. Cost): 120pF. Drain-source protection: diode. Function: fast Switching, DC/DC Converter. G-S Protection: no. Id(imp): 40A. Marking on the case: 4800C G M. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. Quantity per case: 1. RoHS: yes. Td(off): 17 ns. Td(on): 7 ns. Technology: 'Enhancement Mode Power MOSFET'. Trr Diode (Min.): 20 ns. Type of transistor: MOSFET. Original product from manufacturer: Advanced Power. Quantity in stock updated on 10/31/2025, 09:25