N-channel transistor AP40T03GS, 24A, 28A, 25uA, 25m Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v

N-channel transistor AP40T03GS, 24A, 28A, 25uA, 25m Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v

Quantity
Unit price
1-4
2.66$
5-24
2.38$
25-49
2.21$
50+
2.05$
Quantity in stock: 20

N-channel transistor AP40T03GS, 24A, 28A, 25uA, 25m Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=100°C): 24A. ID (T=25°C): 28A. Idss (max): 25uA. On-resistance Rds On: 25m Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 655pF. Channel type: N. Cost): 145pF. Drain-source protection: diode. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 25V. IDss (min): 1uA. Id(imp): 95A. Marking on the case: 40T03GS. Number of terminals: 3. Operating temperature: -55°C...+150°C. Pd (Power Dissipation, Max): 31W. Quantity per case: 1. RoHS: yes. Td(off): 16 ns. Td(on): 6 ns. Technology: ENHANCEMENT MODE POWER MOSFET. Type of transistor: MOSFET. Vgs(th) min.: 1V. Original product from manufacturer: Advanced Power. Quantity in stock updated on 10/31/2025, 09:25

Technical documentation (PDF)
AP40T03GS
29 parameters
ID (T=100°C)
24A
ID (T=25°C)
28A
Idss (max)
25uA
On-resistance Rds On
25m Ohms
Housing
D2PAK ( TO-263 )
Housing (according to data sheet)
D2PAK ( TO-263 )
Voltage Vds(max)
30 v
Assembly/installation
surface-mounted component (SMD)
C(in)
655pF
Channel type
N
Cost)
145pF
Drain-source protection
diode
Function
High-speed switching
G-S Protection
no
Gate/source voltage Vgs
25V
IDss (min)
1uA
Id(imp)
95A
Marking on the case
40T03GS
Number of terminals
3
Operating temperature
-55°C...+150°C
Pd (Power Dissipation, Max)
31W
Quantity per case
1
RoHS
yes
Td(off)
16 ns
Td(on)
6 ns
Technology
ENHANCEMENT MODE POWER MOSFET
Type of transistor
MOSFET
Vgs(th) min.
1V
Original product from manufacturer
Advanced Power