N-channel transistor AP40T03GJ, 24A, 28A, 25uA, 25m Ohms, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 30 v. ID (T=100°C): 24A. ID (T=25°C): 28A. Idss (max): 25uA. On-resistance Rds On: 25m Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Voltage Vds(max): 30 v. Assembly/installation: PCB through-hole mounting. C(in): 655pF. Channel type: N. Cost): 145pF. Drain-source protection: yes. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 25V. IDss (min): 1uA. Id(imp): 95A. Marking on the case: 40T03 GP. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 31.25W. Quantity per case: 1. RoHS: yes. Td(off): 16 ns. Td(on): 6 ns. Technology: ENHANCEMENT MODE POWER MOSFET. Type of transistor: MOSFET. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Original product from manufacturer: Advanced Power. Quantity in stock updated on 10/31/2025, 09:25