N-channel transistor AOD9N50, D-PAK ( TO-252 ), 5.7A, 9A, 10uA, 0.71 Ohms, D-PAK TO-252AA, 500V

N-channel transistor AOD9N50, D-PAK ( TO-252 ), 5.7A, 9A, 10uA, 0.71 Ohms, D-PAK TO-252AA, 500V

Quantity
Unit price
1-4
1.83$
5-24
1.58$
25-49
1.40$
50-99
1.24$
100+
1.02$
+5 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Obsolete product, soon to be removed from the catalog. Last items available
Quantity in stock: 41

N-channel transistor AOD9N50, D-PAK ( TO-252 ), 5.7A, 9A, 10uA, 0.71 Ohms, D-PAK TO-252AA, 500V. Housing: D-PAK ( TO-252 ). ID (T=100°C): 5.7A. ID (T=25°C): 9A. Idss (max): 10uA. On-resistance Rds On: 0.71 Ohms. Housing (according to data sheet): D-PAK TO-252AA. Voltage Vds(max): 500V. : 'enhanced'. Assembly/installation: surface-mounted component (SMD). C(in): 962pF. Channel type: N. Charge: 13.1nC. Cost): 98pF. Drain current: 5.7A. Drain-source protection: yes. Drain-source voltage: 500V. G-S Protection: no. Gate-source voltage: ±30V. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 27A. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 178W. Polarity: unipolar. Power: 178W. Quantity per case: 1. RoHS: yes. Td(off): 55 ns. Td(on): 24 ns. Trr Diode (Min.): 332ns. Type of transistor: MOSFET. Vgs(th) max.: 4.5V. Vgs(th) min.: 3.3V. Quantity in stock updated on 10/31/2025, 09:25

AOD9N50
33 parameters
Housing
D-PAK ( TO-252 )
ID (T=100°C)
5.7A
ID (T=25°C)
9A
Idss (max)
10uA
On-resistance Rds On
0.71 Ohms
Housing (according to data sheet)
D-PAK TO-252AA
Voltage Vds(max)
500V
'enhanced'
Assembly/installation
surface-mounted component (SMD)
C(in)
962pF
Channel type
N
Charge
13.1nC
Cost)
98pF
Drain current
5.7A
Drain-source protection
yes
Drain-source voltage
500V
G-S Protection
no
Gate-source voltage
±30V
Gate/source voltage Vgs
30 v
IDss (min)
1uA
Id(imp)
27A
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
178W
Polarity
unipolar
Power
178W
Quantity per case
1
RoHS
yes
Td(off)
55 ns
Td(on)
24 ns
Trr Diode (Min.)
332ns
Type of transistor
MOSFET
Vgs(th) max.
4.5V
Vgs(th) min.
3.3V