N-channel transistor AO4716, 9.6A, 12A, 20mA, 0.0058 Ohms, SO, SO-8, 30 v

N-channel transistor AO4716, 9.6A, 12A, 20mA, 0.0058 Ohms, SO, SO-8, 30 v

Quantity
Unit price
1-4
1.22$
5-49
1.01$
50-99
0.85$
100+
0.76$
Quantity in stock: 48

N-channel transistor AO4716, 9.6A, 12A, 20mA, 0.0058 Ohms, SO, SO-8, 30 v. ID (T=100°C): 9.6A. ID (T=25°C): 12A. Idss (max): 20mA. On-resistance Rds On: 0.0058 Ohms. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 2154pF. Channel type: N. Cost): 474pF. Drain-source protection: zener diode. Function: t=10sec, Idsm--16.5A/25°C, Idsm--13A/70°C. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 0.1mA. Id(imp): 180A. Number of terminals: 8. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 3.1W. Quantity per case: 1. RoHS: yes. Td(off): 25.2 ns. Td(on): 6.8 ns. Technology: 'Enhancement Mode Field Effect (SRFET)'. Trr Diode (Min.): 12 ns. Type of transistor: MOSFET. Vgs(th) max.: 2V. Vgs(th) min.: 1.3V. Original product from manufacturer: Alpha & Omega Semiconductors. Quantity in stock updated on 10/31/2025, 09:25

Technical documentation (PDF)
AO4716
30 parameters
ID (T=100°C)
9.6A
ID (T=25°C)
12A
Idss (max)
20mA
On-resistance Rds On
0.0058 Ohms
Housing
SO
Housing (according to data sheet)
SO-8
Voltage Vds(max)
30 v
Assembly/installation
surface-mounted component (SMD)
C(in)
2154pF
Channel type
N
Cost)
474pF
Drain-source protection
zener diode
Function
t=10sec, Idsm--16.5A/25°C, Idsm--13A/70°C
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
0.1mA
Id(imp)
180A
Number of terminals
8
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
3.1W
Quantity per case
1
RoHS
yes
Td(off)
25.2 ns
Td(on)
6.8 ns
Technology
'Enhancement Mode Field Effect (SRFET)'
Trr Diode (Min.)
12 ns
Type of transistor
MOSFET
Vgs(th) max.
2V
Vgs(th) min.
1.3V
Original product from manufacturer
Alpha & Omega Semiconductors