N-channel transistor AO3400A, SOT-23 ( TO-236 ), 4.7A, 5.7A, 1uA, 5.7A, 22M Ohms, SOT-23 ( TO236 ), 30 v. Housing: SOT-23 ( TO-236 ). ID (T=100°C): 4.7A. ID (T=25°C): 5.7A. Idss: 1uA. Idss (max): 5.7A. On-resistance Rds On: 22M Ohms. Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 30 v. : 'enhanced'. Assembly/installation: surface-mounted component (SMD). C(in): 630pF. Channel type: N. Charge: 6nC. Cost): 75pF. Drain current: 4.7A. Drain-source protection: yes. Drain-source voltage: 30V. Function: Switching or PWM applications. G-S Protection: no. Gate-source voltage: ±12V. Gate/source voltage Vgs: 12V. IDss (min): 1uA. Id(imp): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 1uA. Polarity: unipolar. Power: 1.4W. Quantity per case: 1. RoHS: yes. Td(off): 21.5 ns. Td(on): 3.2 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Trr Diode (Min.): 16.8 ns. Type of transistor: MOSFET. Original product from manufacturer: Alpha & Omega Semiconductors. Quantity in stock updated on 10/31/2025, 09:52