N-channel transistor 3LN01SS, 0.15A, 10uA, 3.7 Ohms, SMD, SSFP, 30 v
Quantity
Unit price
1-4
1.21$
5-24
1.03$
25-49
0.91$
50-99
0.83$
100+
0.71$
| Obsolete product, soon to be removed from the catalog. Last items available | |
| Quantity in stock: 10 |
N-channel transistor 3LN01SS, 0.15A, 10uA, 3.7 Ohms, SMD, SSFP, 30 v. ID (T=25°C): 0.15A. Idss (max): 10uA. On-resistance Rds On: 3.7 Ohms. Housing: SMD. Housing (according to data sheet): SSFP. Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 7pF. Channel type: N. Cost): 5.9pF. Drain-source protection: yes. Function: Ultrahigh-Speed Switching. G-S Protection: yes. Gate/source voltage (off) max.: 1.3V. Gate/source voltage (off) min.: 0.4V. Id(imp): 0.6A. Pd (Power Dissipation, Max): 0.15W. Quantity per case: 1. Td(off): 150 ns. Td(on): 19 ns. Technology: silicon MOSFET transistor. Type of transistor: MOSFET. Original product from manufacturer: Sanyo. Quantity in stock updated on 10/31/2025, 09:52
3LN01SS
23 parameters
ID (T=25°C)
0.15A
Idss (max)
10uA
On-resistance Rds On
3.7 Ohms
Housing
SMD
Housing (according to data sheet)
SSFP
Voltage Vds(max)
30 v
Assembly/installation
surface-mounted component (SMD)
C(in)
7pF
Channel type
N
Cost)
5.9pF
Drain-source protection
yes
Function
Ultrahigh-Speed Switching
G-S Protection
yes
Gate/source voltage (off) max.
1.3V
Gate/source voltage (off) min.
0.4V
Id(imp)
0.6A
Pd (Power Dissipation, Max)
0.15W
Quantity per case
1
Td(off)
150 ns
Td(on)
19 ns
Technology
silicon MOSFET transistor
Type of transistor
MOSFET
Original product from manufacturer
Sanyo