N-channel transistor 2SK904, 3A, 3A, 500uA, 4 Ohms, TO-220, TO-220AB, 800V

N-channel transistor 2SK904, 3A, 3A, 500uA, 4 Ohms, TO-220, TO-220AB, 800V

Quantity
Unit price
1-4
3.93$
5-9
3.48$
10-24
3.10$
25+
2.88$
Quantity in stock: 37

N-channel transistor 2SK904, 3A, 3A, 500uA, 4 Ohms, TO-220, TO-220AB, 800V. ID (T=100°C): 3A. ID (T=25°C): 3A. Idss (max): 500uA. On-resistance Rds On: 4 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 900pF. Channel type: N. Cost): 90pF. Drain-source protection: diode. Function: High Speed ​​Switching. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 10uA. Id(imp): 12A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. Quantity per case: 1. Spec info: Samsung B4054-0018. Td(off): 150 ns. Td(on): 60 ns. Technology: V-MOS S-L. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Vgs(th) min.: 2.1V. Original product from manufacturer: Fuji Electric. Quantity in stock updated on 10/31/2025, 09:25

Technical documentation (PDF)
2SK904
28 parameters
ID (T=100°C)
3A
ID (T=25°C)
3A
Idss (max)
500uA
On-resistance Rds On
4 Ohms
Housing
TO-220
Housing (according to data sheet)
TO-220AB
Voltage Vds(max)
800V
Assembly/installation
PCB through-hole mounting
C(in)
900pF
Channel type
N
Cost)
90pF
Drain-source protection
diode
Function
High Speed ​​Switching
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
10uA
Id(imp)
12A
Number of terminals
3
Pd (Power Dissipation, Max)
80W
Quantity per case
1
Spec info
Samsung B4054-0018
Td(off)
150 ns
Td(on)
60 ns
Technology
V-MOS S-L
Trr Diode (Min.)
400 ns
Type of transistor
MOSFET
Vgs(th) min.
2.1V
Original product from manufacturer
Fuji Electric