N-channel transistor 2SK4108, n/a, 20A, 100uA, 0.21 Ohms, TO-3PN ( 2-16C1B ), 2-16C1B, 500V

N-channel transistor 2SK4108, n/a, 20A, 100uA, 0.21 Ohms, TO-3PN ( 2-16C1B ), 2-16C1B, 500V

Quantity
Unit price
1-4
7.80$
5-9
6.87$
10-14
6.24$
15-29
5.78$
30+
5.05$
Equivalence available
Quantity in stock: 24

N-channel transistor 2SK4108, n/a, 20A, 100uA, 0.21 Ohms, TO-3PN ( 2-16C1B ), 2-16C1B, 500V. ID (T=100°C): n/a. ID (T=25°C): 20A. Idss (max): 100uA. On-resistance Rds On: 0.21 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): 2-16C1B. Voltage Vds(max): 500V. Assembly/installation: PCB through-hole mounting. C(in): 3400pF. Channel type: N. Cost): 320pF. Drain-source protection: yes. Function: Switching Regulator Applications. G-S Protection: yes. Gate/source voltage Vgs: 30 v. IDss (min): n/a. Id(imp): 80A. Number of terminals: 3. Operating temperature: -...+150°C. Pd (Power Dissipation, Max): 150W. Quantity per case: 1. RoHS: yes. Td(off): 280 ns. Td(on): 130 ns. Technology: Field Effect Transistor, MOS Type (MOS VI). Trr Diode (Min.): 1300 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:25

Technical documentation (PDF)
2SK4108
28 parameters
ID (T=25°C)
20A
Idss (max)
100uA
On-resistance Rds On
0.21 Ohms
Housing
TO-3PN ( 2-16C1B )
Housing (according to data sheet)
2-16C1B
Voltage Vds(max)
500V
Assembly/installation
PCB through-hole mounting
C(in)
3400pF
Channel type
N
Cost)
320pF
Drain-source protection
yes
Function
Switching Regulator Applications
G-S Protection
yes
Gate/source voltage Vgs
30 v
Id(imp)
80A
Number of terminals
3
Operating temperature
-...+150°C
Pd (Power Dissipation, Max)
150W
Quantity per case
1
RoHS
yes
Td(off)
280 ns
Td(on)
130 ns
Technology
Field Effect Transistor, MOS Type (MOS VI)
Trr Diode (Min.)
1300 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
Toshiba

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