N-channel transistor 2SK4013-Q, 6A, 100uA, 1.35 Ohms, TO-220FP, TO-220F ( 2-10U1B ), 800V. ID (T=25°C): 6A. Idss (max): 100uA. On-resistance Rds On: 1.35 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F ( 2-10U1B ). Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 1400pF. Channel type: N. Cost): 130pF. Drain-source protection: yes. Function: Switching Regulator Applications. G-S Protection: yes. Gate/source voltage Vgs: 30 v. Id(imp): 18A. Marking on the case: K4013 Q. Number of terminals: 3. Operating temperature: -...+150°C. Pd (Power Dissipation, Max): 45W. Quantity per case: 1. RoHS: yes. Td(off): 220 ns. Td(on): 80 ns. Technology: Field Effect Transistor, MOS Type (TT-MOS IV). Temperature: +150°C. Trr Diode (Min.): 1100 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:25