N-channel transistor 2SK4012-Q, 13A, 100uA, 0.33 Ohms, TO-220FP, TO-220F, 500V

N-channel transistor 2SK4012-Q, 13A, 100uA, 0.33 Ohms, TO-220FP, TO-220F, 500V

Quantity
Unit price
1-4
3.82$
5-24
3.38$
25-49
2.86$
50+
2.57$
Quantity in stock: 55

N-channel transistor 2SK4012-Q, 13A, 100uA, 0.33 Ohms, TO-220FP, TO-220F, 500V. ID (T=25°C): 13A. Idss (max): 100uA. On-resistance Rds On: 0.33 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 500V. Assembly/installation: PCB through-hole mounting. C(in): 2400pF. Channel type: N. Cost): 220pF. Drain-source protection: diode. Function: Switching Regulator Applications. G-S Protection: yes. Gate/source voltage Vgs: 30 v. Id(imp): 52A. Marking on the case: K4012. Number of terminals: 3. Pd (Power Dissipation, Max): 45W. Quantity per case: 1. RoHS: yes. Td(off): 95 ns. Td(on): 70 ns. Technology: Field Effect Transistor, MOS Type (TT-MOS VI). Temperature: +150°C. Trr Diode (Min.): 1000 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:25

Technical documentation (PDF)
2SK4012-Q
29 parameters
ID (T=25°C)
13A
Idss (max)
100uA
On-resistance Rds On
0.33 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220F
Voltage Vds(max)
500V
Assembly/installation
PCB through-hole mounting
C(in)
2400pF
Channel type
N
Cost)
220pF
Drain-source protection
diode
Function
Switching Regulator Applications
G-S Protection
yes
Gate/source voltage Vgs
30 v
Id(imp)
52A
Marking on the case
K4012
Number of terminals
3
Pd (Power Dissipation, Max)
45W
Quantity per case
1
RoHS
yes
Td(off)
95 ns
Td(on)
70 ns
Technology
Field Effect Transistor, MOS Type (TT-MOS VI)
Temperature
+150°C
Trr Diode (Min.)
1000 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
Toshiba