N-channel transistor 2SK3911, 20A, 500uA, 0.22 Ohms, TO-3PN, 2-16C1B, 600V

N-channel transistor 2SK3911, 20A, 500uA, 0.22 Ohms, TO-3PN, 2-16C1B, 600V

Quantity
Unit price
1-4
5.19$
5-9
4.55$
10-14
4.10$
15-29
3.79$
30+
3.37$
Quantity in stock: 64

N-channel transistor 2SK3911, 20A, 500uA, 0.22 Ohms, TO-3PN, 2-16C1B, 600V. ID (T=25°C): 20A. Idss (max): 500uA. On-resistance Rds On: 0.22 Ohms. Housing: TO-3PN. Housing (according to data sheet): 2-16C1B. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 4250pF. Channel type: N. Cost): 420pF. Drain-source protection: yes. Function: Switching Regulator. G-S Protection: yes. Gate/source voltage Vgs: 30 v. Id(imp): 80A. Marking on the case: K3911. Number of terminals: 3. Operating temperature: -...+150°C. Pd (Power Dissipation, Max): 150W. Quantity per case: 1. Td(off): 80 ns. Td(on): 45 ns. Technology: Field Effect MOS Type(MACH-II-MOS VI). Temperature: +150°C. Trr Diode (Min.): 1350 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:25

Technical documentation (PDF)
2SK3911
29 parameters
ID (T=25°C)
20A
Idss (max)
500uA
On-resistance Rds On
0.22 Ohms
Housing
TO-3PN
Housing (according to data sheet)
2-16C1B
Voltage Vds(max)
600V
Assembly/installation
PCB through-hole mounting
C(in)
4250pF
Channel type
N
Cost)
420pF
Drain-source protection
yes
Function
Switching Regulator
G-S Protection
yes
Gate/source voltage Vgs
30 v
Id(imp)
80A
Marking on the case
K3911
Number of terminals
3
Operating temperature
-...+150°C
Pd (Power Dissipation, Max)
150W
Quantity per case
1
Td(off)
80 ns
Td(on)
45 ns
Technology
Field Effect MOS Type(MACH-II-MOS VI)
Temperature
+150°C
Trr Diode (Min.)
1350 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
Toshiba