N-channel transistor 2SK3699-01MR, 3.7A, 3.7A, 250uA, 3.31 Ohms, TO-220FP, TO-220F, 900V

N-channel transistor 2SK3699-01MR, 3.7A, 3.7A, 250uA, 3.31 Ohms, TO-220FP, TO-220F, 900V

Quantity
Unit price
1-4
4.88$
5-24
4.32$
25-49
3.81$
50+
3.48$
Quantity in stock: 90

N-channel transistor 2SK3699-01MR, 3.7A, 3.7A, 250uA, 3.31 Ohms, TO-220FP, TO-220F, 900V. ID (T=100°C): 3.7A. ID (T=25°C): 3.7A. Idss (max): 250uA. On-resistance Rds On: 3.31 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 900V. Assembly/installation: PCB through-hole mounting. C(in): 430pF. Channel type: N. Cost): 60pF. Drain-source protection: diode. Function: High Speed ​​Switching. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 25uA. Id(imp): 14.8A. Marking on the case: K3699. Number of terminals: 3. Pd (Power Dissipation, Max): 43W. Quantity per case: 1. RoHS: yes. Td(off): 32 ns. Td(on): 19 ns. Technology: Super FAP-G Series. Temperature: +150°C. Trr Diode (Min.): 1us. Type of transistor: MOSFET. Vgs(th) min.: 3V. Original product from manufacturer: Fuji Electric. Quantity in stock updated on 10/31/2025, 09:25

Technical documentation (PDF)
2SK3699-01MR
30 parameters
ID (T=100°C)
3.7A
ID (T=25°C)
3.7A
Idss (max)
250uA
On-resistance Rds On
3.31 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220F
Voltage Vds(max)
900V
Assembly/installation
PCB through-hole mounting
C(in)
430pF
Channel type
N
Cost)
60pF
Drain-source protection
diode
Function
High Speed ​​Switching
G-S Protection
no
Gate/source voltage Vgs
30 v
IDss (min)
25uA
Id(imp)
14.8A
Marking on the case
K3699
Number of terminals
3
Pd (Power Dissipation, Max)
43W
Quantity per case
1
RoHS
yes
Td(off)
32 ns
Td(on)
19 ns
Technology
Super FAP-G Series
Temperature
+150°C
Trr Diode (Min.)
1us
Type of transistor
MOSFET
Vgs(th) min.
3V
Original product from manufacturer
Fuji Electric