N-channel transistor 2SK3667, 7.5A, 7.5A, 100uA, 0.75 Ohms, TO-220FP, TO-220F, 600V

N-channel transistor 2SK3667, 7.5A, 7.5A, 100uA, 0.75 Ohms, TO-220FP, TO-220F, 600V

Quantity
Unit price
1-3
6.80$
4-7
6.40$
8-14
6.10$
15-29
5.81$
30+
5.27$
Equivalence available
Quantity in stock: 10

N-channel transistor 2SK3667, 7.5A, 7.5A, 100uA, 0.75 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 7.5A. ID (T=25°C): 7.5A. Idss (max): 100uA. On-resistance Rds On: 0.75 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. Channel type: N. Drain-source protection: yes. Function: Switching Mode Power Supplies (SMPS). G-S Protection: yes. Gate/source voltage Vgs: 30 v. Id(imp): 30A. Marking on the case: K3667. Number of terminals: 3. Operating temperature: -...+150°C. Pd (Power Dissipation, Max): 45W. Quantity per case: 1. RoHS: yes. Td(off): 150 ns. Td(on): 50 ns. Technology: Field Effect (TT-MOSVI). Trr Diode (Min.): 1200 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:25

Technical documentation (PDF)
2SK3667
28 parameters
ID (T=100°C)
7.5A
ID (T=25°C)
7.5A
Idss (max)
100uA
On-resistance Rds On
0.75 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220F
Voltage Vds(max)
600V
Assembly/installation
PCB through-hole mounting
Channel type
N
Drain-source protection
yes
Function
Switching Mode Power Supplies (SMPS)
G-S Protection
yes
Gate/source voltage Vgs
30 v
Id(imp)
30A
Marking on the case
K3667
Number of terminals
3
Operating temperature
-...+150°C
Pd (Power Dissipation, Max)
45W
Quantity per case
1
RoHS
yes
Td(off)
150 ns
Td(on)
50 ns
Technology
Field Effect (TT-MOSVI)
Trr Diode (Min.)
1200 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
Toshiba

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