N-channel transistor 2SK3567, 3.5A, 3.5A, 100mA, 3.5A, 1.7 Ohms, TO-220FP, TO-220F, 600V

N-channel transistor 2SK3567, 3.5A, 3.5A, 100mA, 3.5A, 1.7 Ohms, TO-220FP, TO-220F, 600V

Quantity
Unit price
1-4
1.91$
5-24
1.43$
25-49
1.25$
50+
1.16$
Equivalence available
Quantity in stock: 89

N-channel transistor 2SK3567, 3.5A, 3.5A, 100mA, 3.5A, 1.7 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 3.5A. ID (T=25°C): 3.5A. Idss: 100mA. Idss (max): 3.5A. On-resistance Rds On: 1.7 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. Channel type: N. Drain-source protection: diode. Function: Switching Mode Power Supplies (SMPS). G-S Protection: yes. Gate/source voltage Vgs: 30 v. Id(imp): 14A. Marking on the case: K3567. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. Quantity per case: 1. RoHS: yes. Technology: Field Effect (TT-MOSVI). Type of transistor: MOSFET. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:31

Technical documentation (PDF)
2SK3567
23 parameters
ID (T=100°C)
3.5A
ID (T=25°C)
3.5A
Idss
100mA
Idss (max)
3.5A
On-resistance Rds On
1.7 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220F
Voltage Vds(max)
600V
Assembly/installation
PCB through-hole mounting
Channel type
N
Drain-source protection
diode
Function
Switching Mode Power Supplies (SMPS)
G-S Protection
yes
Gate/source voltage Vgs
30 v
Id(imp)
14A
Marking on the case
K3567
Number of terminals
3
Pd (Power Dissipation, Max)
35W
Quantity per case
1
RoHS
yes
Technology
Field Effect (TT-MOSVI)
Type of transistor
MOSFET
Original product from manufacturer
Toshiba

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