| Quantity in stock: 282 |
N-channel transistor 2SK3199, 5A, 100uA, 1.2 Ohms, TO-220FP, TO220F-3L, 500V
Quantity
Unit price
1-4
6.04$
5-9
5.59$
10-24
5.28$
25-49
5.02$
50+
4.62$
| Obsolete product, soon to be removed from the catalog | |
| Out of stock | |
| Equivalence available |
N-channel transistor 2SK3199, 5A, 100uA, 1.2 Ohms, TO-220FP, TO220F-3L, 500V. ID (T=25°C): 5A. Idss (max): 100uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO220F-3L. Voltage Vds(max): 500V. Assembly/installation: PCB through-hole mounting. C(in): 650pF. Channel type: N. Cost): 250pF. Equivalents: FS5KM-10-AW. Function: N MOSFET transistor. Gate/source voltage Vgs: 30 v. IDss (min): 0.1uA. Id(imp): 20A. Pd (Power Dissipation, Max): 30W. Quantity per case: 1. RoHS: yes. Td(off): 60 ns. Td(on): 18 ns. Technology: V-MOS (F). Trr Diode (Min.): 2us. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Sanken. Quantity in stock updated on 10/31/2025, 09:31
2SK3199
26 parameters
ID (T=25°C)
5A
Idss (max)
100uA
On-resistance Rds On
1.2 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO220F-3L
Voltage Vds(max)
500V
Assembly/installation
PCB through-hole mounting
C(in)
650pF
Channel type
N
Cost)
250pF
Equivalents
FS5KM-10-AW
Function
N MOSFET transistor
Gate/source voltage Vgs
30 v
IDss (min)
0.1uA
Id(imp)
20A
Pd (Power Dissipation, Max)
30W
Quantity per case
1
RoHS
yes
Td(off)
60 ns
Td(on)
18 ns
Technology
V-MOS (F)
Trr Diode (Min.)
2us
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
Sanken