N-channel transistor 2SK3114, 4A, 100uA, 1.6 Ohms, TO-220FP, TO-220F, 600V

N-channel transistor 2SK3114, 4A, 100uA, 1.6 Ohms, TO-220FP, TO-220F, 600V

Quantity
Unit price
1-4
3.99$
5-24
3.53$
25-49
3.19$
50-99
2.96$
100+
2.87$
Equivalence available
Quantity in stock: 4

N-channel transistor 2SK3114, 4A, 100uA, 1.6 Ohms, TO-220FP, TO-220F, 600V. ID (T=25°C): 4A. Idss (max): 100uA. On-resistance Rds On: 1.6 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 550pF. Channel type: N. Cost): 115pF. Drain-source protection: yes. Function: POWER Switching MOSFET, Industrial Use. G-S Protection: no. Gate/source voltage (off) min.: 2.5V. Gate/source voltage Vgs: 30 v. Id(imp): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. Quantity per case: 1. RoHS: yes. Td(off): 35 ns. Td(on): 12 ns. Technology: MOSFET Transistor. Temperature: +150°C. Trr Diode (Min.): 1.3us. Type of transistor: MOSFET. Original product from manufacturer: Nec. Quantity in stock updated on 10/31/2025, 09:31

Technical documentation (PDF)
2SK3114
27 parameters
ID (T=25°C)
4A
Idss (max)
100uA
On-resistance Rds On
1.6 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220F
Voltage Vds(max)
600V
Assembly/installation
PCB through-hole mounting
C(in)
550pF
Channel type
N
Cost)
115pF
Drain-source protection
yes
Function
POWER Switching MOSFET, Industrial Use
G-S Protection
no
Gate/source voltage (off) min.
2.5V
Gate/source voltage Vgs
30 v
Id(imp)
16A
Number of terminals
3
Pd (Power Dissipation, Max)
30W
Quantity per case
1
RoHS
yes
Td(off)
35 ns
Td(on)
12 ns
Technology
MOSFET Transistor
Temperature
+150°C
Trr Diode (Min.)
1.3us
Type of transistor
MOSFET
Original product from manufacturer
Nec

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