N-channel transistor 2SK3065, 1.6A, 2A, 10uA, 0.32 Ohms, SOT-89 4-Pin ( 3+Tab ), SOT-89 ( MTP3 ), 60V

N-channel transistor 2SK3065, 1.6A, 2A, 10uA, 0.32 Ohms, SOT-89 4-Pin ( 3+Tab ), SOT-89 ( MTP3 ), 60V

Quantity
Unit price
1-4
0.73$
5-24
0.58$
25-49
0.52$
50+
0.47$
Quantity in stock: 140

N-channel transistor 2SK3065, 1.6A, 2A, 10uA, 0.32 Ohms, SOT-89 4-Pin ( 3+Tab ), SOT-89 ( MTP3 ), 60V. ID (T=100°C): 1.6A. ID (T=25°C): 2A. Idss (max): 10uA. On-resistance Rds On: 0.32 Ohms. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89 ( MTP3 ). Voltage Vds(max): 60V. Assembly/installation: surface-mounted component (SMD). C(in): 160pF. Channel type: N. Cost): 85pF. Drain-source protection: diode. Function: High Speed ​​Switching. G-S Protection: yes. Gate/source voltage Vgs: 20V. Id(imp): 8A. Marking on the case: KE. Note: screen printing/SMD code KE. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. Quantity per case: 1. RoHS: yes. Td(off): 120ns. Td(on): 20 ns. Technology: MOS FET. Temperature: +150°C. Type of transistor: MOSFET. Vgs(th) max.: 1.5V. Vgs(th) min.: 0.8V. Original product from manufacturer: ROHM. Quantity in stock updated on 10/31/2025, 09:31

Technical documentation (PDF)
2SK3065
30 parameters
ID (T=100°C)
1.6A
ID (T=25°C)
2A
Idss (max)
10uA
On-resistance Rds On
0.32 Ohms
Housing
SOT-89 4-Pin ( 3+Tab )
Housing (according to data sheet)
SOT-89 ( MTP3 )
Voltage Vds(max)
60V
Assembly/installation
surface-mounted component (SMD)
C(in)
160pF
Channel type
N
Cost)
85pF
Drain-source protection
diode
Function
High Speed ​​Switching
G-S Protection
yes
Gate/source voltage Vgs
20V
Id(imp)
8A
Marking on the case
KE
Note
screen printing/SMD code KE
Number of terminals
3
Pd (Power Dissipation, Max)
0.5W
Quantity per case
1
RoHS
yes
Td(off)
120ns
Td(on)
20 ns
Technology
MOS FET
Temperature
+150°C
Type of transistor
MOSFET
Vgs(th) max.
1.5V
Vgs(th) min.
0.8V
Original product from manufacturer
ROHM