N-channel transistor 2SK2850, 6A, 200uA, 1.87 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 900V

N-channel transistor 2SK2850, 6A, 200uA, 1.87 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 900V

Quantity
Unit price
1-4
9.63$
5-9
8.76$
10-24
8.11$
25+
7.65$
Obsolete product, soon to be removed from the catalog
Out of stock
Equivalence available

N-channel transistor 2SK2850, 6A, 200uA, 1.87 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 900V. ID (T=25°C): 6A. Idss (max): 200uA. On-resistance Rds On: 1.87 Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 900V. Assembly/installation: PCB through-hole mounting. C(in): 950pF. Channel type: N. Cost): 140pF. Drain-source protection: yes. Function: High Speed ​​Switching. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 10uA. Id(imp): 24A. Operating temperature: -...+150°. Pd (Power Dissipation, Max): 125W. Quantity per case: 1. Td(off): 110 ns. Td(on): 20 ns. Technology: TT-MOSV. Trr Diode (Min.): 900ns. Type of transistor: MOSFET. Vgs(th) max.: 3.5V. Vgs(th) min.: 2.5V. Original product from manufacturer: Fuji Electric. Quantity in stock updated on 10/31/2025, 09:31

Technical documentation (PDF)
2SK2850
27 parameters
ID (T=25°C)
6A
Idss (max)
200uA
On-resistance Rds On
1.87 Ohms
Housing
TO-3P ( TO-218 SOT-93 )
Housing (according to data sheet)
TO-3P
Voltage Vds(max)
900V
Assembly/installation
PCB through-hole mounting
C(in)
950pF
Channel type
N
Cost)
140pF
Drain-source protection
yes
Function
High Speed ​​Switching
G-S Protection
no
Gate/source voltage Vgs
30 v
IDss (min)
10uA
Id(imp)
24A
Operating temperature
-...+150°
Pd (Power Dissipation, Max)
125W
Quantity per case
1
Td(off)
110 ns
Td(on)
20 ns
Technology
TT-MOSV
Trr Diode (Min.)
900ns
Type of transistor
MOSFET
Vgs(th) max.
3.5V
Vgs(th) min.
2.5V
Original product from manufacturer
Fuji Electric

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