N-channel transistor 2SK2723, 13A, 25A, 10uA, 28m Ohms, TO-220FP, TO-220F, 60V

N-channel transistor 2SK2723, 13A, 25A, 10uA, 28m Ohms, TO-220FP, TO-220F, 60V

Quantity
Unit price
1-4
2.87$
5-24
2.63$
25-49
2.41$
50+
2.19$
Quantity in stock: 74

N-channel transistor 2SK2723, 13A, 25A, 10uA, 28m Ohms, TO-220FP, TO-220F, 60V. ID (T=100°C): 13A. ID (T=25°C): 25A. Idss (max): 10uA. On-resistance Rds On: 28m Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 60V. Assembly/installation: PCB through-hole mounting. C(in): 830pF. Channel type: N. Cost): 430pF. Drain-source protection: diode. Function: High Current Switching. G-S Protection: yes. Gate/source voltage Vgs: 20V. Id(imp): 100A. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Quantity per case: 1. Td(off): 100 ns. Td(on): 21 ns. Technology: Field Effect Power Transistor. Temperature: +150°C. Trr Diode (Min.): 60 ns. Type of transistor: MOSFET. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Original product from manufacturer: Nec. Quantity in stock updated on 10/31/2025, 09:31

Technical documentation (PDF)
2SK2723
28 parameters
ID (T=100°C)
13A
ID (T=25°C)
25A
Idss (max)
10uA
On-resistance Rds On
28m Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220F
Voltage Vds(max)
60V
Assembly/installation
PCB through-hole mounting
C(in)
830pF
Channel type
N
Cost)
430pF
Drain-source protection
diode
Function
High Current Switching
G-S Protection
yes
Gate/source voltage Vgs
20V
Id(imp)
100A
Number of terminals
3
Pd (Power Dissipation, Max)
25W
Quantity per case
1
Td(off)
100 ns
Td(on)
21 ns
Technology
Field Effect Power Transistor
Temperature
+150°C
Trr Diode (Min.)
60 ns
Type of transistor
MOSFET
Vgs(th) max.
2V
Vgs(th) min.
1V
Original product from manufacturer
Nec